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1 ion-implanted contact
контакт, виготовлений методом іонної імплантаціїEnglish-Ukrainian dictionary of microelectronics > ion-implanted contact
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2 contact
1. ім.1) контакт2. дієсл. контактувати - base contact
- beam-lead contact
- bifurcated contact
- blocking contact
- bonded contact
- bump contact
- buried contact
- crimp contact
- edge-board contact
- excimer-laser mixed contact
- hard contact
- injection contact
- ion-implanted contact
- low-resistance contact
- metallization contact
- metal-semiconductor contact
- MIS contact
- nonohmic contact
- nonrectifying [ohmic] contact
- point contact
- polysilicon-to-diffusion contact
- protruding contact
- rectifying contact
- resistance contact
- Schottky-barriercontact
- Schottkycontact
- Schottky base contact
- soft contact
- soldered contact
- substrate contact
- vacuum contact
- welded contact -
3 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region -
4 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
5 junction
1) (р–n–)перехід 2) спай (термопари) 3) з’єднання; зчленовування - alloy junction
- back-to-back junctions
- backward biased junction
- barrier junction
- base-collector junction
- base-emitter junction
- blocking junction
- chip junction
- cold junction
- collector-basejunction
- collectorjunction
- degenerate junction
- depleted junction
- diffused junction
- diffusion junction
- diode junction
- doped junction
- drain-channel junction
- drain-substrate junction
- electrical junction
- emitter-base junction
- emitter junction
- epitaxial junction
- epitaxially grown junction
- Esaki junction
- floating junction
- forward-biased junction
- fused junction
- graded junction
- grown semiconductor junction
- grown junction
- heteroface junction
- heterogeneous junction
- heterogeneous junction
- high-low junction
- homogeneous junction
- hot junction
- hyperabrupt junction
- injector junction
- intrinsic-extrinsic junction
- ion-implanted junction
- isolation junction
- Josephson junction
- long-lifetime junction
- low-high junction
- low-lifetime junction
- metallurgical junction
- metal–semiconductor junction
- nonreclifying junction
- n–p junction
- ohmic junction
- photoresistive junction
- photovoltaic junction
- pin junction
- planar junction
- point-contact junction
- point-contact Josephson junction
- recessed junction
- recrystallized junction
- rectifying junction
- remelt junction
- reverse-biased junction
- Schottky barrier junction
- sealed junction
- semiconductor-barrier Josephson junction
- shallow junction
- soft junction
- source-channel junction
- source-substrate junction
- step junction
- superconducting junction
- temperature controlled junction
- thin-film Josephson junction
- tunneling junction
- tunnel junction
- unbiased junction
- vapor-phase grown junction
- vapor grown junction
- weak-link junctions
- Zener breakdown junction -
6 photomask
1. ім. фотошаблон 2. дієсл. фотомаскувати (див. т-ж mask) - E-chrome photomask
- emulsion photomask
- gold-on-mylar photomask
- ion-implanted photomask
- microlitbography photomask
- pellicled photomask
- production photomask
- see-through photomask
- single-pattern photomask
- transparent photomask
- workingphotomask
- workphotomask
- 1x photomaskEnglish-Ukrainian dictionary of microelectronics > photomask
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7 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer
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